MJF6107 Datasheet, PDF (4/8 Pages) Motorola, Inc – PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS

MJF6107
15
10
50 µs
7
0.1 ms
5
0.5 ms
3
2
dc
1
0.7
0.5
0.3
0.2
0.15
1
CURRENT LIMIT
SECONDARY BREAKDOWN LIMĆ
IT
THERMAL LIMIT @ T_C = 25°C
(SINGLE PULSE)
2 3 5 7 10
20 30 50 70 100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Active–Region Safe Operating
Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C – V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150_C. T_J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
5
3
2
t_s
1
0.7
0.5
0.3
t_f
0.2
T_J = 25°C
V_CC = 30 V
I_C/I_B = 10
I_B1 = I_B2
0.1
0.07
0.05
0.07 0.1
0.2 0.3 0.5 0.7 1
23
I_C, COLLECTOR CURRENT (AMP)
Figure 5. Turn–Off Time
57
300
T_J = 25°C
200
C_ib
100
70
C_ob
50
30
0.5
1
23
5
10
20 30 50
V_R, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
500
300
200
T_J = 150°C
100
70
25°C
50
30
20
-ā55°C
V_CE = 2 V
10
7
5
0.07 0.1
0.2 0.3 0.5 0.7 1
23
I_C, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
57
2
1.6
I_C = 1 A
1.2
T_J = 25°C
2.5 A
5A
0.8
0.4
0
10
20 30 50
100 200 300 500 1000
I_B, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
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