MJE15034_06 Datasheet, PDF (4/5 Pages) ON Semiconductor – 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS

10
I_C/I_B = 10
MJE15034 NPN, MJE15035 PNP
10
I_C/I_B = 10
1.0
−40°C
25°C
T_J = 150°C
1.0
−40°C
25°C
T_J = 150°C
0.1
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 10. V_BE(sat)
NPN MJE15034
1.2
1.0
−40°C
0.8
0.6
25°C
0.4
T_J = 150°C
0.2
0.0
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 12. V_BE(on)
NPN MJE15034
80
70 _{TJ = 25°C}
f test = 1 MHz
60
50
40
30
V_CE= 10 V
20
10
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 14. Typical Current Gain Bandwidth Product
NPN MJE15034
0.1
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 11. V_BE(sat)
PNP MJE15035
1.4
1.2
1.0
−40°C
0.8
0.6
25°C
0.4
T_J = 150°C
0.2
0.0
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 13. V_BE(on)
PNP MJE15035
100
T_J = 25°C
80 f test = 1 MHz
60
40
20
V_CE= 10 V
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 15. Typical Current Gain Bandwidth Product
PNP MJE15035
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