MJD6039_12 Datasheet, PDF (4/5 Pages) ON Semiconductor – Darlington Power Transistors

MJD6039, NJVMJD6039T4G
TYPICAL ELECTRICAL CHARACTERISTICS
6k
T_J = 125C
4k
3k
25C
2k
V_CE = 3 V
- 55C
1k
800
600
400
300
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
I_C, COLLECTOR CURRENT (AMP)
Figure 7. DC Current Gain
3.4
T_J = 125C
3
2.6 _{IC =}
0.5 A
1A 2A
4A
2.2
1.8
1.4
1
0.6
0.1
0.2 0.5 1 2
5 10 20
I_B, BASE CURRENT (mA)
50 100
Figure 8. Collector Saturation Region
2.2
T_J = 25C
1.8
V_BE(sat) @ I_C/I_B = 250
1.4
V_BE @ V_CE = 3 V
1
V_CE(sat) @ I_C/I_B = 250
0.6
0.2
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
I_C, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
+ 0.8
*APPLIED FOR I_C/I_B < h_FE/3
0
- 0.8
25C to 150C
- 1.6
- 2.4
q_VC for V_CE(sat)
- 55C to 25C
- 3.2
-4
q_VC for V_BE
25C to 150C
25C to 150C
- 4.8
0.04 0.06
0.1
0.2
0.4 0.6 1
I_C, COLLECTOR CURRENT (AMP)
2 34
Figure 10. Temperature Coefficients
10⁵
REVERSE
10⁴
10^{3 VCE = 30 V}
FORWARD
10²
T_J = 150C
10¹
10⁰
100C
10^-1
25C
- 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
V_BE, BASE-EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
Figure 11. Collector Cut−Off Region
NPN
MJD6039
COLLECTOR
BASE
 8 k  60
EMITTER
Figure 12. Darlington Schematic
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4