MJD122 Datasheet, PDF (4/8 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

MJD122 MJD127
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD127
NPN MJD122
+5
+ 4 *IC/IB ≤ hFE/3
+3
+2
+1
0
– 1 θ_VC for VCE(sat)
25°C to 150°C
–2
– 55°C to 25°C
– 3 _{θVB for VBE} 25°C to 150°C
–4
– 55°C to 25°C
–5
0.1
0.2 0.3 0.5
1
23
IC, COLLECTOR CURRENT (AMP)
5 7 10
+5
+ 4 *IC/IB ≤ hFE/3
+3
25°C to 150°C
+2
– 55°C to 25°C
+1
0
–1
*θ_VC for VCE(sat)
–2
–3
θ_VB for VBE
–4
25°C to 150°C
– 55°C to 25°C
–5
0.1
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
5 7 10
Figure 5. Temperature Coefficients
105
REVERSE
104
FORWARD
105
REVERSE
104
FORWARD
103
VCE = 30 V
103
VCE = 30 V
102
TJ = 150°C
101
100°C
100
25°C
10–1
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
– 1.2 – 1.4
102
TJ = 150°C
101
100
100°C
25°C
10–1
– 0.6 – 0.4 – 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1
VBE, BASE–EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
Figure 6. Collector Cut–Off Region
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
TC = 25°C
VCE = 4 Vdc
IC = 3 Adc
PNP
NPN
2
5 10 20
50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 7. Small–Signal Current Gain
300
TJ = 25°C
200
100
70
50
30
0.1 0.2
Cob
Cib
PNP
NPN
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
50 100
4
Motorola Bipolar Power Transistor Device Data