MJ11021_08 Datasheet, PDF (4/5 Pages) ON Semiconductor – Complementary Darlington Silicon Power Transistors

MJ11021(PNP) MJ11022 (NPN)
PNP
NPN
10,000
7000
5000
3000
2000
1000
700
500
300
200
T_J = 150°C
T_J = 25°C
T_J = - 55°C
V_CE = 5.0 Vdc
30,000
20,000
10,000
7000
5000
3000
2000
T_J = 25°C
T_J = 150°C
T_J = - 55°C
1000
700
500
V_CE = 5.0 Vdc
100
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 15 20
300
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (A)
I_C, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain
15 20
PNP
4.0
3.5
3.0
I_C = 5.0 A
2.5
I_C = 15 A
I_C = 10 A
T_J = 25°C
NPN
4.0
3.5
3.0
I_C = 5.0 A
2.5
I_C = 10 A
I_C = 15 A
T_J = 25°C
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
0.5
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
I_B, BASE CURRENT (mA)
I_B, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP
4.0
NPN
4.0
3.5 T_J = 25°C
3.0
3.5
T_J = 25°C
3.0
2.5
2.5
2.0
1.5
1.0
0.5
0.1
V_BE(sat) @ I_C/I_B = 100
V_BE @ V_CE = 5.0 V
V_CE(sat) @ I_C/I_B = 100
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70
2.0
1.5 V_BE(sat) @ I_C/I_B = 100
1.0
0.5
0.1
V_BE @ V_CE = 5.0 V
V_CE(sat) @ I_C/I_B = 100
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
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