MGP14N60E Datasheet, PDF (4/5 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor

MGP14N60E
0.8
TJ = 125°C
VDD = 360 V
VGE = 15 V
0.6
IC = 10 A
7.5 A
0.4
5.0 A
0.2
5
15
25
35
45
RG, GATE RESISTANCE (OHMS)
Figure 7. Turn–Off Losses versus
Gate Resistance
1.0
TJ = 125°C
0.8
VCC = 360 V
W ^{VGE = 15 V}
RG = 20
0.6
0.4
0.2
0
0
5
10
15
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn–Off Losses versus
Collector Current
0.8
VCC = 360 V
0.6
W ^{VGE = 15 V}
RG = 20
IC = 10 A
7.5 A
0.4
5.0 A
0.2
0
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Turn–Off Losses versus
Junction Temperature
100
10
W ^{TJ = 125°C}
RGE = 20
VGE = 15 V
1
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 10. Reverse Biased Safe
Operating Area
4
Motorola IGBT Device Data