MC78LC00_06 Datasheet, PDF (4/12 Pages) ON Semiconductor – Micropower Voltage Regulator

MC78LC00 Series
ELECTRICAL CHARACTERISTICS (V_in = V_out(nom.) + 1.0 V, C_in = 1.0 mF, C_out = 1.0 mF, T_J = 25°C, unless otherwise noted.) (Note 11)
HT SUFFIX
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage
V
30HT1 Suffix (V_in = 5.0 V)
2.950
3.0
3.075
33HT1 Suffix (V_in = 5.0 V)
3.218
3.3
3.382
40HT1 Suffix (V_in = 6.0 V)
50HT1 Suffix (V_in = 7.0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Line Regulation
V_in = [V_O + 1.0] V to 10 V, I_O = 1.0 mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Load Regulation (IO = 1.0 to 10 mA)}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{30HT1 Suffix (Vin = 5.0 V)}
33HT1 Suffix (V_in = 6.0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{40HT1 Suffix (Vin = 7.0 V)}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ^{50HT1 Suffix (V}in ^{= 8.0 V)}
Output Current (Note 12)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{30HT1 Suffix (Vin = 5.0 V)}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ^{33HT1 Suffix (V}in ^{= 6.0 V)}
40HT1 Suffix (V_in = 7.0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 50HT1 Suffix (V_in = 8.0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Dropout Voltage
30HT1 Suffix (I_O = 1.0 mA)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 33HT1 Suffix (IO = 1.0 mA)
40HT1 Suffix (I_O = 1.0 mA)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{50HT1 Suffix (IO = 1.0 mA)}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Quiescent Current}
30HT1 Suffix (V_in = 5.0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{33HT1 Suffix (Vin = 5.0 V)}
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ 40HT1 Suffix (Vin = 6.0 V)
50HT1 Suffix (V_in = 7.0 V)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ _{Output Voltage Temperature Coefficient}
Reg_line
Reg_load
I_O
V_in − V_O
I_CC
T_C
3.900
4.875
−
−
−
−
−
35
35
45
55
−
−
−
−
−
−
−
−
−
4.0
5.0
0.05
40
40
50
60
50
50
65
80
40
35
25
25
1.1
1.1
1.2
1.3
±100
4.100
5.125
0.2
60
60
70
90
−
−
−
−
60
53
38
38
3.3
3.3
3.6
3.9
−
%/V
mV
mA
mV
mA
ppm/°C
7. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
8. Latch up capability (85°C) "100 mA
9. Maximum package power dissipation limits must be observed.
PD
+
TJ(max) *
R_qJA
TA
10. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
12. Output Current is measured when V_out = V_O1 − 3% where V_O1 = V_out at I_out = 0 mA.
DEFINITIONS
Load Regulation
The change in output voltage for a change in output current
at a constant temperature.
Dropout Voltage
The input/output differential at which the regulator output
no longer maintains regulation against further reductions in
input voltage. Measured when the output drops 3% below its
nominal. The junction temperature, load current, and
minimum input supply requirements affect the dropout level.
Maximum Power Dissipation
The maximum total dissipation for which the regulator will
operate within its specifications.
Quiescent Current
The quiescent current is the current which flows through the
ground when the LDO operates without a load on its output:
internal IC operation, bias, etc. When the LDO becomes
loaded, this term is called the Ground current. It is actually the
difference between the input current (measured through the
LDO input pin) and the output current.
Line Regulation
The change in output voltage for a change in input voltage.
The measurement is made under conditions of low dissipation
or by using pulse technique such that the average chip
temperature is not significantly affected.
Line Transient Response
Typical over and undershoot response when input voltage is
excited with a given slope.
Maximum Package Power Dissipation
The maximum power package dissipation is the power
dissipation level at which the junction temperature reaches its
maximum operating value, i.e. 125°C. Depending on the
ambient power dissipation and thus the maximum available
output current.
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