MC74VHC259 Datasheet, PDF (4/8 Pages) ON Semiconductor – 8-Bit Addressable Latch/1-of-8 Decoder CMOS Logic Level Shifter

MC74VHC259
MAXIMUM RATINGS (Note 1.)
Symbol
Parameter
Value
Unit
V_CC
V_IN
V_OUT
I_IK
I_OK
I_OUT
I_CC
P_D
Positive DC Supply Voltage
Digital Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V_CC and GND Pins
Power Dissipation in Still Air
–0.5 to +7.0
V
–0.5 to +7.0
V
–0.5 to V_CC +0.5
V
–20
mA
$20
mA
$25
mA
$75
mA
SOIC Package
200
mW
TSSOP
180
T_STG
V_ESD
Storage Temperature Range
ESD Withstand Voltage
–65 to +150
°C
Human Body Model (Note 2.)
>2000
V
Machine Model (Note 3.)
>200
Charged Device Model (Note 4.)
>2000
I_{LATCH–UP}
q_JA
Latch–Up Performance
Above V_CC and Below GND at 125°C (Note 5.)
Thermal Resistance, Junction to Ambient
SOIC Package
TSSOP
$300
143
164
mA
°C/W
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
V_CC
V_IN
V_OUT
T_A
t_r, t_f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range, all Package Types
Input Rise or Fall Time
Min
2.0
0
0
–55
V_CC = 3.3 V + 0.3 V
0
V_CC = 5.0 V + 0.5 V
Max
5.5
5.5
V_CC
125
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 5. Failure Rate vs. Time Junction Temperature
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