MC74LVXU04 Datasheet, PDF (4/6 Pages) ON Semiconductor – Hex Inverter(Unbuffered)

MC74LVXU04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{VIH High−LevelInputVoltage}
V_CC
T_A = 25°C
T_A = −40 to 85°C
Test Conditions
V
Min
Typ
Max
Min
Max Unit
2.0
1.5
3.0
2.0
3.6
2.4
1.5
V
2.0
2.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_IL Low−Level Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOH High−LevelOutputVoltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^(Vin ^{= V}IH ^{or V}IL⁾
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOL Low−Level Output Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Vin = VIH or VIL)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Input Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC Quiescent Supply Current}
2.0
0.5
0.5
V
3.0
0.8
0.8
3.6
0.8
0.8
I_OH = −50 mA
I_OH = −50 mA
I_OH = −4 mA
I_OL = 50 mA
I_OL = 50 mA
I_OL = 4 mA
2.0
1.9
2.0
1.9
V
3.0
2.9
3.0
2.9
3.0 2.58
2.48
2.0
0.0
0.1
0.1
V
3.0
0.0
0.1
0.1
3.0
0.36
0.44
V_in = 5.5 V or GND
3.6
V_in = V_CC or GND
3.6
±0.1
±1.0
mA
2.0
20.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{TA = 25°C}
T_A = −40 to 85°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPHL
Propagation Delay, Input to
Output
V_CC = 2.7V
C_L = 15 pF
C_L = 50 pF
5.4
10.1
1.0
12.5
ns
7.9
13.6
1.0
16.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC=3.3±0.3V CL=15pF}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^CL ^{= 50 pF}
4.1
6.2
1.0
7.5
6.6
9.7
1.0
11.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{tOSHL Output−to−Output Skew}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{tOSLH (Note6)}
V_CC = 2.7V
C_L = 50 pF
V_CC = 3.3 ±0.3V C_L = 50 pF
1.5
1.5
ns
1.5
1.5
6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t_OSHL) or LOW−to−HIGH (t_OSLH); parameter
guaranteed by design.
CAPACITIVE CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
T_A = 25°C
T_A = −40 to 85°C
Min
Typ
Max
Min
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Cin InputCapacitance}
4
10
10
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{CPD Power Dissipation Capacitance (Note 7)}
18
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.}
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC / 6 (per buffer). C_PD is used to determine the
no−load dynamic power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
NOISE CHARACTERISTICS (Input t_r = t_f = 3.0 ns, C_L = 50 pF, V_CC = 3.3 V, Measured in SOIC Package)
T_A = 25°C
Symbol
Characteristic
Typ
Max
Unit
V_OLP Quiet Output Maximum Dynamic V_OL
0.3
0.5
V
V_OLV Quiet Output Minimum Dynamic V_OL
−0.3 −0.5
V
V_IHD Minimum High Level Dynamic Input Voltage
2.0
V
V_ILD Maximum Low Level Dynamic Input Voltage
0.8
V
A
50%
t_PLH
V_CC
GND
t_PHL
DEVICE
UNDER
TEST
OUTPUT
TEST POINT
C_L*
O
50% V_CC
Figure 2. Switching Waveforms
*Includes all probe and jig capacitance
Figure 3. Test Circuit
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