MC74LVX245 Datasheet, PDF (4/8 Pages) Motorola, Inc – LOW-VOLTAGE CMOS

MC74LVX245
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25°C}
T_A = − 40 to 85°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min Typ Max Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHL
Propagation Delay
Input to Output
V_CC = 2.7 V
C_L = 15 pF
C_L = 50 pF
6.1 10.7 1.0
13.5
ns
8.6 14.2 1.0
17.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VCC ^{= 3.3 ± 0.3 V}
C_L = 15 pF
C_L = 50 pF
4.7 6.6
1.0
8.0
7.2 10.1 1.0
11.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZH
Output Enable Time to
High and Low Level
V_CC = 2.7 V
R_L = 1 kW
C_L = 15 pF
C_L = 50 pF
9.0 16.9 1.0
20.5
ns
11.5 20.4 1.0
24.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC = 3.3 ± 0.3 V}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^RL ^{= 1 kW}
C_L = 15 pF
C_L = 50 pF
7.1 11.0 1.0
13.0
9.6 14.5 1.0
16.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLZ,
t_PHZ
Output Disable Time From
High and Low Level
V_CC = 2.7 V
R_L = 1 kW
C_L = 50 pF
11.5 18.0 1.0
21.0
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC = 3.3 ± 0.3 V}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RL = 1 kW}
C_L = 50 pF
9.6 12.8 1.0
14.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tOSHL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tOSLH
Output−to−Output Skew
(Note 1)
V_CC = 2.7 V
V_CC = 3.3 ±0.3 V
C_L = 50 pF
C_L = 50 pF
1.5
1.5
ns
1.5
1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.}
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (t_OSHL) or LOW−to−HIGH (t_OSLH); parameter
guaranteed by design.
CAPACITIVE CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
T_A = 25°C
T_A = − 40 to 85°C
Min Typ Max Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Cin Input Capacitance (T/R, OE)}
4 10
10
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{CI/O Maximum 3−State I/O Capacitance}
8
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{CPD Power Dissipation Capacitance (Note 2)}
21
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.}
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC / 8 (per bit). C_PD is used to determine the no−load
dynamic power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
NOISE CHARACTERISTICS (Input t_r = t_f = 3.0ns, C_L = 50pF, V_CC = 3.3V, Measured in SOIC Package)
T_A = 25°C
Symbol
Characteristic
Typ
Max
Unit
V_OLP Quiet Output Maximum Dynamic V_OL
0.5
0.8
V
V_OLV Quiet Output Minimum Dynamic V_OL
−0.5
−0.8
V
V_IHD Minimum High Level Dynamic Input Voltage
2.0
V
V_ILD Maximum Low Level Dynamic Input Voltage
0.8
V
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