MC74LCX07_12 Datasheet, PDF(4/6 Page) ON Semiconductor – Low-Voltage CMOS Hex Buffer with Open Drain Outputs

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MC74LCX07_12 Datasheet, PDF (4/6 Pages) ON Semiconductor – Low-Voltage CMOS Hex Buffer with Open Drain Outputs

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MC74LCX07

DYNAMIC SWITCHING CHARACTERISTICS

Symbol

Characteristic

Condition

TA = +25Â°C

Min Typ Max Unit

VOLP

Dynamic LOW Peak Voltage (Note 3)

VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

0.9

VCC = 2.5 V, CL = 30 pF, VIH =2.5 V, VIL = 0 V

0.7

VOLV

Dynamic LOW Valley Voltage (Note 3) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

â0.8

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

â0.6

3. Number of outputs defined as ânâ. Measured with ânâ1â outputs switching from HIGHâtoâLOW or LOWâtoâHIGH. The remaining output is

measured in the LOW state.

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Condition

Typical

Unit

CIN

COUT

CPD

Input Capacitance

Output Capacitance

Power Dissipation Capacitance

VCC = 3.3 V, VI = 0 V or VCC

10 MHz, VCC = 3.3 V, VI = 0 V or VCC

Vmi

tPZL

Vmi

tPLZ

VCC

Vmo

VLZ

VOL

PROPAGATION DELAYS

tR = tF = 2.5 ns, 10% to 90%; f = 1MHz; tW = 500 ns

PULSE

GENERATOR

Symbol

Vmi

Vmo

VLZ

3.3 V $ 0.3 V

1.5 V

VOL + 0.3 V

VCC

2.7 V

1.5 V

VOL + 0.3 V

2.5 V $ 0.2 V

VCC/2

VOL + 015 V

Figure 3. AC Waveforms

VCC

DUT

6 V or VCC 2

GND

TEST

SWITCH

tPZL, tPLZ

Open Collector/Drain tPLH and tPHL

tPZH, tPHZ

GND

CL = 50 pF at VCC = 3.3 "0.3 V or equivalent (includes jig and probe capacitance)

CL = 30 pF at VCC = 2.5 "0.2 V or equivalent (includes jig and probe capacitance)

RL = R1 = 500 W or equivalent

RT = ZOUT of pulse generator (typically 50 W)

Figure 4. Test Circuit

http://onsemi.com

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