MC74HCU04A_06 Datasheet, PDF (4/9 Pages) ON Semiconductor – Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS

MC74HCU04A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
V_CC
– 55 to
V
25_C v 85_C v 125_C Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOL Maximum Low−Level Output}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Voltage
V_in = V_CC
|I_out| v 20 mA
2.0
0.2
0.2
0.2
V
4.5
0.5
0.5
0.5
6.0
0.5
0.5
0.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_in = V_CC
|I_out| v 2.4 mA 3.0
|I_out| v 4.0 mA 4.5
|I_out| v 5.2 mA 6.0
0.32
0.32
0.32
0.32
0.37
0.37
0.32
0.40
0.40
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Maximum Input Leakage Current V_in = V_CC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC MaximumQuiescent Supply}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Current (per Package)}
V_in = V_CC or GND
I_out = 0 mA
6.0
1
10
40
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).}
2. For V_CC = 2.0 V, V_out = 0.2 V or V_CC − 0.2 V.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{AC ELECTRICAL CHARACTERISTICS (C}L ^{= 50 pF, Input t}r ^{= t}f ^{= 6 ns)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tTLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Cin MaximumInputCapacitance}
Guaranteed Limit
V_CC
– 55 to
V
25_C v 85_C v 125_C Unit
2.0
70
3.0
40
4.5
14
6.0
12
90
105
ns
45
50
18
21
15
18
2.0
75
3.0
27
4.5
15
6.0
13
95
110
ns
32
36
19
22
16
19
—
10
10
10
pF
3. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
4. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Per Inverter)*
15
pF
5. Used to determine the no−load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
INPUT A
OUTPUT Y
t_r
90%
50%
10%
t_PHL
90%
50%
10%
t_f
V_CC
GND
t_PLH
t_THL
t_TLH
Figure 1. Switching Waveforms
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
C_L*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
V_CC
A
Y
Figure 3. Logic Detail
(1/6 of Device Shown)
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