MC74HC4316A Datasheet, PDF (4/12 Pages) ON Semiconductor – Quad Analog Switch/Multiplexer/Demultiplexer with Separate Analog and Digital Power Supplies

MC74HC4316A
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) V_EE = GND Except Where Noted
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Guaranteed Limit}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
V_CC – 55 to
V
25°C v 85°C v 125°C _Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VIH ^{Minimum High−Level Voltage, Control R}on ^{= Per Spec}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{or Enable Inputs}
2.0
1.5
1.5
1.5
V
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VIL Maximum Low−Level Voltage, Control Ron = Per Spec}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{or Enable Inputs}
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Maximum Input Leakage Current,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Control or Enable Inputs}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC Maximum Quiescent Supply Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(per Package)}
V_in = V_CC or GND
6.0
V_EE = – 6.0 V
V_in = V_CC or GND
V_IO = 0 V
V_EE = GND 6.0
V_EE = – 6.0 6.0
± 0.1
2
4
± 1.0
20
40
± 1.0
mA
mA
40
160
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
DC ELECTRICAL CHARACTERISTICS Analog Section (Voltages Referenced to V_EE)
Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Ron Maximum“ON”Resistance}
Test Conditions
V_in = V_IH
V_IS = V_CC to V_EE
I_S v 2.0 mA (Figures 1, 2)
V_CC V_EE – 55 to
V
V
25°C v 85°C v 125°C _Unit
2.0* 0.0
−
−
−
W
4 5 0.0
160
200
240
4.5 − 4.5
90
110
130
6.0 − 6.0
90
110
130
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin = VIH}
2.0 0.0
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_IS = V_CC or V_EE (Endpoints)
4.5
0.0
90
I_S v 2.0 mA (Figures 1, 2)
4.5 − 4.5
70
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{6.0 −6.0}
70
−
−
115
140
90
105
90
105
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _DRon
Maximum Difference in “ON”
Resistance Between Any Two
Channels in the Same Package
V_in = V_IH
V_IS = 1/2 (V_CC − V_EE)
I_S v 2.0 mA
2.0 0.0
−
−
−
W
4.5 0.0
20
25
30
4.5 – 4.5
15
20
25
6.0 – 6.0
15
20
25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Ioff Maximum Off−Channel
Leakage Current, Any One
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Channel
V_in = V_IL
V_IO = V_CC or V_EE
Switch Off (Figure 3)
6.0 – 6.0
0.1
0.5
1.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Ion Maximum On−Channel}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Leakage Current, Any One}
Channel
V_in = V_IH
V_IS = V_CC or V_EE
(Figure 4)
6.0 – 6.0
0.1
0.5
1.0
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book}
(DL129/D).
*At supply voltage (V_CC − V_EE) approaching 2.0 V the analog switch−on resistance becomes extremely non−linear. Therefore, for low−voltage
operation, it is recommended that these devices only be used to control digital signals.
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