MC74HC365A Datasheet, PDF (4/8 Pages) ON Semiconductor – Hex 3-State Noninverting Buffer with Common Enables

MC74HC365A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
V_CC
Test Conditions
V
V_OL
Maximum Low−Level Output
V_in = V_IL
2.0
Voltage
|I_out| v 20 μA
4.5
6.0
V_in = V_IL
|I_out| v 3.6 mA 3.0
|I_out| v 6.0 mA 4.5
|I_out| v 7.8 mA 6.0
I_in
Maximum Input Leakage Current V_in = V_CC or GND
6.0
I_OZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
6.0
V_in = V_IL or V_IH
V_out = V_CC or GND
I_CC
Maximum Quiescent Supply
V_in = V_CC or GND
6.0
Current (per Package)
I_out = 0 μA
Guaranteed Limit
– 55 to
25_C v 85_C v 125_C _Unit
0.1
0.1
0.1
V
0.1
0.1
0.1
0.1
0.1
0.1
0.26
0.33
0.40
0.26
0.33
0.40
0.26
0.33
0.40
± 0.1
± 1.0
± 1.0
μA
± 0.5
± 5.0
± 10
μA
4
40
160
μA
AC ELECTRICAL CHARACTERISTICS (C_L = 50 pF, Input t_r = t_f = 6 ns)
Symbol
t_PLH,
t_PHL
Parameter
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
t_PLZ,
t_PHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
t_PZL,
t_PZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
t_TLH,
t_THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
C_in
Maximum Input Capacitance
C_out
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
Guaranteed Limit
V_CC
– 55 to
V
25_C v 85_C v 125_C _Unit
2.0
120
150
180
ns
3.0
60
75
90
4.5
24
30
36
6.0
20
26
31
2.0
220
275
330
ns
3.0
110
140
170
4.5
44
55
66
6.0
37
47
56
2.0
220
275
330
ns
3.0
110
140
170
4.5
44
55
66
6.0
37
47
56
2.0
60
75
90
ns
3.0
22
28
34
4.5
12
15
18
6.0
10
13
15
—
10
10
10
pF
—
15
15
15
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD
Power Dissipation Capacitance (Per Buffer)*
60
pF
* Used to determine the no−load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC.
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