MC74HC245A_06 Datasheet, PDF (4/9 Pages) ON Semiconductor – Octal 3−State Noninverting Bus Transceiver High−Performance Silicon−Gate CMOS

MC74HC245A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VIH
Parameter
Minimum High−Level Input Voltage
Test Conditions
V_out = V_CC – 0.1 V
|I_out| v 20 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VIL Maximum Low−LevelInputVoltage Vout = 0.1 V}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{|Iout| v 20 mA}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOH MinimumHigh−LevelOutput}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Voltage
V_in = V_IH
|I_out| v 20 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VOL MaximumLow−LevelOutput}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Voltage
V_in = V_IH |I_out| v 2.4 mA
|I_out| v 6.0 mA
|I_out| v 7.8 mA
V_in = V_IL
|I_out| v 20 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin = VIL |Iout| v 2.4 mA}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^|Iout^{| v 6.0 mA}
|I_out| v 7.8 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Maximum Input Leakage Current
V_in = V_CC or GND
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{IOZ Maximum Three−State Leakage Output in High−Impedance State}
Current
V_in = V_IL or V_IH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vout = VCC or GND}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ICC Maximum Quiescent Supply Cur- Vin = VCC or GND}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{rent (per Package)}
I_out = 0 mA
Guaranteed Limit
V_CC –55 to
V
25_C v 85_C v 125_C Unit
2.0
1.5
1.5
1.5
V
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
2.0
1.9
1.9
1.9
V
4.5
4.4
4.4
4.4
6.0
5.9
5.9
5.9
3.0
2.48
2.34
2.2
4.5
3.98
3.84
3.7
6.0
5.48
5.34
5.2
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
6.0
0.1
0.1
0.1
3.0
0.26
0.33
0.4
4.5
0.26
0.33
0.4
6.0
0.26
0.33
0.4
6.0
± 0.1
± 1.0
± 1.0
mA
6.0
± 0.5
± 5.0
± 10
mA
6.0
4.0
40
160
mA
7. Information on typical parametric values and high frequency or heavy load considerations can be found in the ON Semiconductor
High−Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)}
Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
V_CC –55 to
V
25_C v 85_C v 125_C _Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHL
Maximum Propagation Delay,
A to B, B to A
(Figures 1 and 3)
2.0
75
3.0
55
4.5
15
6.0
13
95
110
ns
70
80
19
22
16
19
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPLZ^,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHZ
Maximum Propagation Delay,
Direction or Output Enable to A or B
(Figures 2 and 4)
2.0
110
140
165
ns
3.0
90
110
130
4.5
22
28
33
6.0
19
24
28
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPZH
Maximum Propagation Delay,
Output Enable to A or B
(Figures 2 and 4)
2.0
110
140
165
ns
3.0
90
110
130
4.5
22
28
33
6.0
19
24
28
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_TLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tTHL
Maximum Output Transition Time,
Any Output
(Figures 1 and 3)
2.0
60
75
90
ns
3.0
23
27
32
4.5
12
15
18
6.0
10
13
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Cin Maximum Input Capacitance (Pin 1 or Pin 19)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Cout Maximum Three−State I/O Capacitance}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(I/O in High−Impedance State)}
−
10
10
10
pF
−
15
15
15
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed}
CMOS Data Book (DL129/D).
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Per Transceiver Channel) (Note 9)
40
pF
9. Used to determine the no−load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC. For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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