MC14528B Datasheet, PDF (4/12 Pages) ON Semiconductor – Dual Monostable Multivibrator

MC14528B
SWITCHING CHARACTERISTICS ^(8.) (C_L = 50 pF, T_A = 25_C)
Characteristic
C_X
Symbol
pF
R_X
V_DD
kΩ
Vdc
Min Typ ^(9.) Max Unit
Output Rise and Fall Time
t_TLH, t_THL = (1.5 ns/pF) C_L + 25 ns
t_TLH, t_THL = (0.75 ns/pF) C_L + 12.5 ns
t_TLH, t_THL = (0.55 ns/pF) C_L + 9.5 ns
Turn–Off, Turn–On Delay Time — A or B to Q or Q
t_PLH, t_PHL = (1.7 ns/pF) C_L + 240 ns
t_PLH, t_PHL = (0.66 ns/pF) C_L + 87 ns
t_PLH, t_PHL = (0.5 ns/pF) C_L + 65 ns
Turn–Off, Turn–On Delay Time — A or B to Q or Q
t_PLH, t_PHL = (1.7 ns/pF) C_L + 620 ns
t_PLH, t_PHL = (0.66 ns/pF) C_L + 257 ns
t_PLH, t_PHL = (0.5 ns/pF) C_L + 185 ns
Input Pulse Width — A or B
t_TLH,
t_THL
t_PLH,
t_PHL
t_PLH,
t_PHL
t_WH
—
—
15
5.0
1000
10
15
5.0
ns
5.0
—
100
200
10
—
50
100
15
—
40
80
ns
5.0
—
325
650
10
—
120
240
15
—
90
180
ns
5.0
—
705
—
10
—
290
—
15
—
210
—
5.0
150
70
10
75
30
15
55
30
—
ns
—
—
t_WL
1000
10
5.0
—
70
—
ns
10
—
30
—
15
—
30
—
Output Pulse Width — Q or Q
(For C_X < 0.01 µF use graph for
appropriate V_DD level.)
Output Pulse Width — Q or Q
(For C_X > 0.01 µF use formula:
t_W = 0.2 R_X C_X Ln [V_DD – V_SS]) ^(6.)
Pulse Width Match between Circuits in the same
package
t_W
15
5.0
5.0
—
550
—
ns
10
—
350
—
15
—
300
—
t_W
10,000 10
5.0
15
30
45
µs
10
10
50
90
15
15
55
95
t1 – t2 10,000 10
5.0
—
6.0
25
%
10
—
8.0
35
15
—
8.0
35
Reset Propagation Delay — Reset to Q or Q
t_PLH,
t_PHL
15
5.0
5.0
—
325
600
ns
10
—
90
225
15
—
60
170
1000
10
5.0
—
1000
—
ns
10
—
300
—
15
—
250
—
Retrigger Time
t_rr
15
5.0
5.0
0
—
—
ns
10
0
—
—
15
0
—
—
1000
10
5.0
0
10
0
15
0
—
—
ns
—
—
—
—
External Timing Resistance
R_X
—
—
—
5.0
—
1000
kΩ
External Timing Capacitance
C_X
—
—
—
No Limits ^(7.)
µF
6. R_X is in Ohms, C_X is in farads, V_DD and V_SS in volts, PW_out in seconds.
7. If C_X > 15 µF, Use Discharge Protection Diode D_X, per Fig. 9.
8. The formulas given are for the typical characteristics only at 25_C.
9. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
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