MBRS140LT3_07 Datasheet, PDF (4/5 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

MBRS140LT3
1000
125
24°C/W
T_J = 25°C
115
44°C/W _63°C/W
105
80°C/W
R_tja = 94°C/W
100
95
85
75
10
0 5.0 10 15 20 25 30 35 40
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
65
0 5.0 10 15 20 25 30 35 40
V_R, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T_J therefore must include forward and reverse power effects. The allowable operating
T_J may be calculated from the equation: T_J = T_Jmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T_J due to reverse bias under DC conditions only and is calculated as T_J = T_Jmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1.0E+00
50%
20%
10%
1.0E−01 _5.0%
2.0%
1.0E−02 ^1.0%
1.0E−03
R_tjl(t) = R_tjl*r(t)
1.0E−04
0.00001
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (s)
Figure 9. Thermal Response, Junction−to−Lead
1.0E+00
50%
20%
1.0E−01
10%
5.0%
2.0%
1.0E−02 _1.0%
1.0E−03
1.0E−04
0.00001
R_tjl(t) = R_tjl*r(t)
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (s)
Figure 10. Thermal Response, Junction−to−Ambient
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4
100
1000
100
1000