MBR30H100CT_08 Datasheet, PDF (4/8 Pages) ON Semiconductor – SWITCHMODE™ Power Rectifier

MBR30H100CT, MBRF30H100CT
30
28
26
T_J = 175°C
24
SQUARE WAVE
22
20
18
16
dc
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
I_F(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
10000
1000
100
10
0
T_J = 25°C
20
40
60
80
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
100
D = 0.5
10
0.2
0.1
1 ^0.05
0.01
0.1
0.01
0.000001
SINGLE PULSE
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.00001
0.0001
0.001
0.01
0.1
1
10
t₁, TIME (sec)
Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT
100
1000
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.01
P_(pk)
t₁
t₂
SINGLE PULSE
DUTY CYCLE, D = t₁/t₂
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t₁, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBR30H100CT
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