EFC4621R Datasheet, PDF (4/9 Pages) ON Semiconductor – Power MOSFET

EFC4621R
IS -- VSS
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VGS=1.5V
1.0
0.5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Source to Source Voltage, VSS -- V
RSS(on) -- VGS
100
Ta=25°C
90
IS=3A
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
Gate to Source Voltage, VGS -- V
| yfs | -- IS
10
7 VSS=10V
5
3
2
1.0
7
5
Ta= ^{--25°C 75°C}
3
2
25^°C
0.1
7
5
3
2
0.01
0.001 ^{2 3 5 7} 0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0
4.5
VSS=10V
Source Current, IS -- A
VGS -- Qg
4.0 IS=6A
2 3 5 7 ₁₀
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
20
30
Total Gate Charge, Qg -- nC
IS -- VGS
9
VSS=10V
8
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
Gate to Source Voltage, VGS -- V
RSS(on) -- Ta
35
30
V ^{GS=3.7V, I S=3A}
25
20
15
V ^{GSV=G2.S5=VV3,G.I1SSV==,43I.AS5=V3,AI} _S=3A
V ^{GS=4.0V, I S=3A}
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
10
7 VGS=0V
5
IS -- VF(S-S)
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.6
0.8
1.0
1.2
1.4
Forward Source to Source Voltage, VF(S-S) -- V
ASO
100
7
5
3
ISP=60A(PW≤10μs)
2
10 ^IS=9A
7
5
3
2
1m1s00^μ_s
10ms
100ms
1.0
7
5
3
2
Operation in this area
is limited by RSS(on).
DC _operation
0.1
7
5
3
2
Ta=25°C
Single pulse
0.01 ^{When mounted on ceramic substrate (5000mm2×0.8mm)}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Source Voltage to Source Voltage, VSS -- V
No.A2180-4/9