CM1641 Datasheet, PDF (4/10 Pages) ON Semiconductor – 4-Channel Low Capacitance Dual-Voltage ESD Protection Array

CM1641
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
V_F
LV Diode Reverse Voltage
(Positive Voltage)
LV Diode Forward Voltage
(Negative Voltage)
I_LEAK
LV Channel Leakage Current
CONDITIONS
I_F = 10mA; T_A= 25°C
I_F = 10mA; T_A= 25°C
T_A= -30°C to 65°C; VIN= 3.3V,
V_N=0V
MIN
6.8
–1.05
TYP MAX UNITS
8.2 9.2
V
–0.9 –0.6
V
100 nA
C_IN
LV Channel Input Capacitance
At 1 MHz, V_N=0V, VIN=1.65V
1.2 1.5
pF
∆C_IN
LV Channel Input Capacitance
Matching
I_{LEAK_HV}
C_{IN_HV}
HV Channel Leakage Current
HV Channel Input Capacitance
At 1 MHz, V_N=0V, VIN=1.65V
T_A=25°C; V_CC=11V, V_N=0V
At 1 MHz, V_N=0V, VIN=2.5V
0.02
pF
0.1 1.0
µA
53
pF
V_{F_HV}
V_ESD
V_CL
R_DYN
HV Diode Breakdown Voltage
Positive Voltage
I_F = 10mA; T_A=25°C
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000-4-2 standard
T_A=25°C
LV Channel Clamp Voltage (Pin 1-3)
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A,
t_P = 8/20µS
Dynamic Resistance
LV Channel Positive Transients
LV Channel Negative Transients
HV Channel Positive Transients
HV Channel Negative Transients
I_PP = 1A, t_P = 8/20µS
Any I/O pin to Ground;
14.6
17.7
V
±8 (Pin 1-3)
kV
±15 (Pin 4)
kV
+9.64
V
–1.75
V
0.72
Ω
0.59
Ω
1.20
Ω
0.36
Ω
Note 1: All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
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