CM1621 Datasheet, PDF (4/11 Pages) California Micro Devices Corp – LCD and Camera EMI Filter Array with ESD Protection

CM1621
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE1)}
SYMBOL PARAMETER
R
Resistance
CONDITIONS
MIN TYP MAX UNITS
85 100 115
Ω
C
Total Channel Capacitance
TOTAL
At 2.5VDC Reverse Bias, 1MHz, 27 34
41
pF
30mVAC
C
Capacitance C
At 2.5VDC Reverse Bias, 1MHz,
17
pF
30mVAC
V_DIODE
I_LEAK
V_SIG
V_ESD
R_DYN
f
C
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
In-system ESD Withstand Voltage
a) Human Body Model (HBM),
MIL-STD-883, Method 3015
b) Contact Discharge per
IEC 61000-4-2 Level 4
Dynamic Resistance
Positive
Negative
Cut-off Frequency
Z_SOURCE = 50Ω, Z_LOAD = 50Ω
I = 10μA
DIODE
+ V = _DIODE 3.3V
I_LOAD = 1.0mA
Note 2
Channel R = 100Ω,
Channel C = 15pF
6.0
V
100
nA
6.0 7.0 8.0
V
±30
kV
±15
kV
2.3
Ω
0.9
Ω
90 135 MHz
Note 3
A
1GHz
Absolute Attenuation @ 1GHz from 0dB Z = 50Ω, Z = 50Ω, DC
SOURCE
LOAD
-40
dB
Level
Bias = 0V; Notes 1 and 3
A
Absolute Attenuation @ 800MHz to
800MHz - 3 GHz
Z_SOURCE = 50Ω, Z _LOAD = 50Ω, DC
-35
dB
3GHz from 0dB Level
Bias = 0V; Notes 1 and 3
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 2 | Page 4 of 11 | www.onsemi.com