CM1620 Datasheet, PDF (4/15 Pages) ON Semiconductor – LCD and Camera EMI Filter Array with ESD Protection

CM1620
ELECTRICAL OPERATING CHARACTERISTICS ^(NOTE1)
SYMBOL PARAMETER
R
Resistance
C_TOTAL Total Channel Capacitance
C
Capacitance C
V
DIODE
I
LEAK
V
SIG
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
CONDITIONS
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
I = 10μA
DIODE
V = +3.3V
DIODE
I = 10mA
LOAD
MIN TYP
80 100
14 17
8.5
6.0
0.1
5.6 6.8
MAX UNITS
120
Ω
22
pF
pF
V
1.0
μA
9.0
V
V_ESD In-system ESD Withstand Voltage
See Note 2
a) Human Body Model, MIL-STD-883,
±30
Method 3015
b) Contact Discharge per IEC 61000-4-
±15
2 Level 4
R
Dynamic Resistance
DYN
Positive
2.3
Negative
0.9
f
Cut-off Frequency
Channel R = 100Ω,
C
Z_SOURCE = 50Ω, Z_LOAD = 50Ω
Channel C = 17pF
200
A
1GHz
Absolute Attenuation @ 1GHz from 0dB Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
-30
Level
DC Bias = 0V; See Notes 1 and 3
A
Absolute Attenuation @ 800MHz to
800MHz - 6GHz
Z = 50Ω, Z = 50Ω,
SOURCE
LOAD
-25
6GHz from 0dB Level
DC Bias = 0V; See Notes 1 and 3
kV
kV
Ω
Ω
MHz
dB
dB
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
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