CM1499-E6DE Datasheet, PDF (4/11 Pages) ON Semiconductor – 6-Channel LCD and Camera EMI Filter Array with ESD Protection

CM1499-E6DE
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE1)}
SYMBOL PARAMETER
R
Resistance
CONDITIONS
C_TOTAL Total Channel Capacitance
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
C
Capacitance C₁
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
V_DIODE Standoff Voltage
I_DIODE=1mA
I_LEAK
Diode Leakage Current (reverse bias)
V_DIODE = +3.0V
V_ESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-
2 Level 4
R_DYN
Dynamic Resistance
Positive
Negative
f_C
A_1GHz
Cut-off Frequency
Z_SOURCE=50Ω, Z_LOAD=50Ω
Channel R = 100Ω,
Channel C = 15pF
Absolute Attenuation @ 1GHz from 0dB Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
Level
DC Bias = 0V; Notes 1 and 3
A_{800MHz -} Absolute Attenuation @ 800MHz to
6GHz
6GHz from 0dB Level
Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
DC Bias = 0V; Notes 1 and 3
MIN TYP
85 100
24 30
15
6.0 7.0
0.1
±30
±15
2.3
0.9
110
35
30
MAX UNITS
115
Ω
36
pF
pF
8.0
V
1.0
mA
kV
kV
W
W
MHz
dB
dB
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 2 | Page 4 of 11 | www.onsemi.com