CM1485 Datasheet, PDF (4/8 Pages) California Micro Devices Corp – Dual Channel EMI Filter with ESD Protection

CM1485
ELECTRICAL OPERATING CHARACTERISTICS⁽¹⁾
SYMBOL PARAMETER
R
Resistance
CONDITIONS
MIN TYP MAX UNITS
90 100 110
Ω
C_TOTAL Total Channel Capacitance
At 2.5VDC Reverse Bias, 1MHz, 19.2 24 28.8
pF
30mVAC
I
LEAK
Diode Leakage Current (reverse bias) V = +3.0V
DIODE
V
Breakdown Voltage
BR
Positive Clamp
I = 1mA
LOAD
V_ESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-
4-2 Level 4
1.0
μA
6.0 7.0
V
±30
kV
±15
kV
R_DYN
Dynamic Resistance
Positive
Negative
2.3
Ω
0.9
Ω
f
Cut-off Frequency
C
Z = 50Ω, Z = 50Ω
125
SOURCE
LOAD
A
1GHz
Absolute Attenuation @ 1GHz from 0dB Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
35
Level
DC Bias = 0V; See Notes 1 and 3
MHz
dB
A
Absolute Attenuation @ 800MHz to
800MHz - 6GHz
Z_SOURCE = 50Ω, Z _LOAD = 50Ω,
30
dB
6GHz from 0dB Level
DC Bias = 0V; See Notes 1 and 3
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
Rev. 2 | Page 4 of 8 | www.onsemi.com