CM1443-08CP Datasheet, PDF (4/13 Pages) ON Semiconductor – 8-Channel EMI Filter Array with ESD Protection

CM1443-08CP
ELECTRICAL OPERATING CHARACTERISTICS¹
SYMBOL PARAMETER
R
Resistance
CONDITIONS
C_T
C_S
TCR
Total Capacitance
Single Capacitor
Temperature Coefficient of Resistance
At 2.5V DC
At 2.5V DC
TCC Temperature Coefficient of Capacitance At 2.5V DC
V_DIODE
I_LEAK
V_SIG
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
I_DIODE=10µA
V_DIODE=3.3V
I_LOAD = 10mA
V_ESD In-system ESD Withstand Voltage
Notes 2 and 4
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
V_CL
Clamping Voltage during ESD Discharge Notes 2,3 and 4
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
f_C
Cut-off frequency
Z = _SOURCE 50Ω, Z_LOAD = 50Ω
R = 100Ω, C_S = 8.5pF
MIN TYP
80 100
14 17
8.5
1200
-300
5.5
0.1
MAX
120
21
1.0
UNITS
Ω
pF
pF
ppm/°C
ppm/°C
V
µA
5.6 6.8
9.0
V
-1.5 -0.8
-0.4
V
±30
kV
±15
kV
+10
V
-5
V
220
MHz
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open.
Rev. 2 | Page 4 of 13 | www.onsemi.com