CM1443-04CP Datasheet, PDF (4/11 Pages) ON Semiconductor – 4-Channel EMI Filter Array with ESD Protection

CM1443-04CP
ELECTRICAL OPERATING CHARACTERISTICS ^{(NOTE 1)}
SYMBOL PARAMETER
R
Resistance
CONDITIONS
C_T
C_S
V_DIODE
I
LEAK
V
SIG
Total Capacitance
Single Capacitor
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
At 2.5V DC
At 2.5V DC
I_DIODE=10μA
V =3.3V
DIODE
I = 10mA
LOAD
V
In-system ESD Withstand Voltage
ESD
Notes 2 and 4
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
V
Clamping Voltage during ESD Discharge Notes 2,3 and 4
CL
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
f
Cut-off frequency
C
Z
SOURCE
=
50Ω,
Z
LOAD
=
50Ω
R
=
100Ω,
C
S
=
8.5pF
MIN TYP
80 100
14 17
8.5
5.5
0.1
MAX
120
21
1.0
5.6 6.8
9.0
-0.4 -0.8
-1.5
±30
±15
+10
-5
220
UNITS
Ω
pF
pF
V
μA
V
V
kV
kV
V
V
MHz
Note 1: T_A=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
A1, then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open.
Rev. 2 | Page 4 of 11 | www.onsemi.com