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| CM1293A Datasheet, PDF (4/16 Pages) ON Semiconductor – 2-and 4-Channel Low Capacitance ESD Protection Arrays | |||
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Specifications (contâd)
CM1293A
ELECTRICAL OPERATING CHARACTERISTICS1
SYMBOL PARAMETER
CONDITIONS
VP
Operating Supply Voltage (VP-VN)
IP
Operating Supply Current
(VP-VN)=3.3V
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8mA; TA=25°C
ILEAK
Channel Leakage Current
CIN
Channel Input Capacitance
TA=25°C; VP=5V, VN=0V
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V
MIN TYP MAX UNITS
3.3 5.5
V
8.0 µA
0.60 0.80 0.95 V
0.60 0.80 0.95 V
±0.1 ±1.0 µA
2.0 pF
âCIO
VESD
Channel I/O to I/O capacitance
ESD Protection
Peak Discharge Voltage at any
channel input, in system
Contact discharge per
IEC 61000-4-2 standard
Notes 3 and 4; TA=25°C
1.5
pF
±8
kV
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
IPP=1A, tp=8/20µs; TA=25°C; Notes 4
+9.9
V
â1.6
V
RDYN Dynamic Resistance
Positive Transients
Negative Transients
IPP=1A, tp=8/20µs; TA=25°C; Notes 4
0.96
â¦
0.5
â¦
Note 1: All parameters specified at TA = â40°C to +85°C unless otherwise noted.
Note 2: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5Kâ¦, VP = 3.3V, VN grounded.
Note 3: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330â¦, VP = 3.3V, VN grounded.
Note 4: These measurements performed with no external capacitor on VP.
Rev. 4 | Page 4 of 16 | www.onsemi.com
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