CM1263-06DE Datasheet, PDF (4/7 Pages) ON Semiconductor – Low Capacitance ESD Protection for High-Speed Serial Interfaces

CM1263-06DE
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
V_P
Operating Supply Voltage (V_P-V_N)
I_P
Operating Supply Current
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
I_LEAK
Channel Leakage Current
CONDITIONS
V_P=3.3V, V_N=0V (per V_P pin)
T_A=25°C; I_F = 8mA; V_P=3.3V, V_N=0V
T_A=25°C; V_P=3.3V, V_N=0V (Channel 1)
MIN TYP MAX UNITS
3.3
5.5
V
8.0
µA
0.60 0.80 0.95
V
0.60 0.80 0.95
V
250
nA
I_R
Reverse (Leakage Current)
C_IN
Channel Input Capacitance
V_P=3.3V, V_N=0V (Channels 1-6);
V_P=floating; V_N=0V (per channel)
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=0V
1000 nA
1000 nA
0.88 1.2
pF
∆C_IN Channel Input Capacitance
Matching
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=0V
0.02
pF
C_MUTUAL Mutual Capacitance between signal At 1 MHz, V_P=3.3V, V_N=0V, V_IN=0V
pin and adjacent signal pin
0.11
pF
V_ESD
ESD Protection
Peak Discharge Voltage at any Notes 2 and 3; T_A=25°C
channel input, in system
a) Contact discharge per
±8
kV
IEC 61000-4-2 standard
b) Air discharge per
IEC 61000-4-2 standard
±15
kV
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A, t_P = 8/20µS;
Notes 3
+9.96
V
–1.6
V
R_DYN
Dynamic Resistance
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A, t_P = 8/20µS
Any I/O pin to Ground; Note 3
0.96
Ω
0.5
Ω
Note 1: All parameters specified at T_A = –40°C to +85ûC unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 3: These measurements performed with no external capacitor on V_P (V_P floating).
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