CM1224 Datasheet, PDF (4/14 Pages) ON Semiconductor – 2- and 4-Channel Low Capacitance ESD Protection Arrays

CM1224
ELECTRICAL OPERATING CHARACTERISTICS^{(SEE NOTE 1)}
SYMBOL PARAMETER
V_P
Operating Supply Voltage (V_P-V_N)
I_P
Operating Supply Current
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
I_LEAK
Channel Leakage Current
C_IN
Channel Input Capacitance
∆C_IN
V_ESD
V_CL
Channel Input Capacitance Matching
ESD Protection - Peak Discharge Voltage at
any channel input, in system
Contact discharge per IEC 61000-4-2
standard
Channel Clamp Voltage
Positive Transients
Negative Transients
CONDITIONS
(V_P-V_N)=3.3V
I_F = 8mA; T_A=25°C
T_A=25°C; V_P=5V, V_N=0V
At 1 MHz, V_P=3.3V, V_N=0V,
V_IN=1.65V
At 1 MHz, V_P=3.3V, V_N=0V,
V_IN=1.65V
Notes 2 and 3; T_A=25°C
T_A=25°C, I_PP = 1A,
t_P = 8/20µS; Note 3
MIN TYP MAX UNITS
3.3 5.5
V
8.0 µA
0.60 0.80 0.95 V
0.60 0.80 0.95 V
±0.1 ±1.0 µA
0.60 0.70 0.80 pF
0.02
pF
±8
kV
V
+10.0
V
–1.8
V
R_DYN Dynamic Resistance
Positive Transients
Negative Transients
I_PP = 1A, t_P = 8/20µS
Any I/O pin to Ground;
Note 3
1.08
Ω
0.66
Ω
Note 1: All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 3: These measurements performed with no external capacitor on V_P (V_P floating).
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