CM1216 Datasheet, PDF (4/13 Pages) California Micro Devices Corp – 6- and 8-Channel Low Capacitance ESD Arrays

CM1216
ELECTRICAL OPERATING CHARACTERISTICS ^{NOTE 1}
SYMBOL
V_P
PARAMETER
Operating Supply Voltage
(V_P-V_N)
CONDITIONS
MIN
I_P
Operating Supply Current
(V_P-V_N) = 3.3V
V_F
Diode Forward Voltage
I_F = 20mA; T_A=25°C
Top Diode
0.6
Bottom Diode
0.6
I_LEAK
Channel Leakage Current
T_A = 25°C; V_P= 5V, V_N = 0V
C_IN
Channel Input Capacitance
At 1 MHz, V_P=3.3V, V_N =0V,
V_IN=1.65V;Note2
∆C_IN
Channel Input Capacitance
Matching
C_MUTUAL
Mutual Capacitance
(V_P-V_N) = 3.3V
V_ESD
ESD Protection
Notes 2 and 3; T_A = 25°C
Peak Discharge Voltage at
±15
any
channel input, in system,
contact
discharge per
IEC 61000-4-
2 standard
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
I_PP = 1A, t_P = 8/20µS; T_A=25°C
R_DYN
Dynamic Resistance
Positive transients
Negative transients
I_PP = 1A, t_P = 8/20µS; T_A=25°C
TYP
3.3
0.8
0.8
±0.1
1.6
0.04
0.13
+9.0
-1.5
0.6
0.4
MA
X
5.5
8
0.95
0.95
±1.0
2.0
UNIT
V
µA
V
V
µA
pF
pF
pF
kV
V
V
Ω
Ω
Note 1: All parameters specified at T_A = -40°C to +85°C unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 3: From I/O pins to V_P or V_N only. V_P bypassed to V_N with low ESR 0.2µF ceramic capacitor.
Rev. 2 | Page 4 of 13 | www.onsemi.com