BD809_07 Datasheet, PDF (4/5 Pages) ON Semiconductor – Plastic High Power Silicon Transistor

BD809 (NPN), BD810 (PNP)
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
SINGLE ^P(pk)
q_JC(t) = r(t) q_JC
PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) q_JC(t)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
1.0 2.0 3.0 5.0
t, PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 6. Thermal Response
Note 1:
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C - V_CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on T_J(pk) = 150°C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
ORDERING INFORMATION
Device
Package
Shipping^†
BD809
BD809G
TO-220
TO-220
(Pb-Free)
50 Units / Rail
BD810
BD810G
TO-220
TO-220
(Pb-Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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