ATP214 Datasheet, PDF (4/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP214
10 _VDS=30V
9 ID=75A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
Total Gate Charge, Qg -- nC
IT15711
PD -- Tc
70
ASO
5
3 IDP=225A (PW≤10μs)
2
100 ID=75A
7
5
3
2
10
7
5
Operation in
3 ^{this area is}
2 limited by RDS(on).
1001m0sm1sms
100_μs10^μs
1.0
7
5
3
2 Tc=25°C
0.1 ^{Single pulse}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3}
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
5 7 ₁₀₀
IT15514
60
50
40
30
20
10
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT15513
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Ambient Temperature, Ta -- °C
IT15179
No. A1712-4/7