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AMIS-42671_13 Datasheet, PDF (4/13 Pages) ON Semiconductor – High Speed Autobaud CAN Transceiver | |||
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AMISâ42671
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
VCANH
Supply Voltage
DC Voltage at Pin CANH
0 < VCC < 5.25 V;
No Time limit
â0.3
+7
V
â45
+45
V
VCANL
DC Voltage at Pin CANL
0 < VCC < 5.25 V;
No Time Limit
â45
+45
V
VTxD
DC Voltage at Pin TxD
â0.3
VCC +
V
0.3
VRxD
DC Voltage at Pin RxD
â0.3
VCC +
V
0.3
VAUTB
DC Voltage at Pin AUTB
â0.3
VCC +
V
0.3
VREF
DC Voltage at Pin VREF
â0.3
VCC +
V
0.3
Vtran(CANH)
Vtran(CANL)
Vesd
Transient Voltage at Pin CANH
Transient Voltage at Pin CANL
Electrostatic Discharge Voltage at All Pins
Note 2
Note 2
Note 3
Note 4
â150
+150
V
â150
+150
V
â4
+4
kV
â500
+500
V
Latchâup
Static Latchâup at all Pins
Note 5
100
mA
Tstg
Storage Temperature
â55
+155
°C
TA
Ambient Temperature
â40
+125
°C
TJ
Maximum Junction Temperature
â40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).
3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
4. Static latchâup immunity: static latchâup protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3â1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
Rth(vjâa)
Thermal Resistance from JunctionâtoâAmbient in SOâ8
In Free Air
150
k/W
package
Rth(vjâs)
Thermal Resistance from JunctionâtoâSubstrate of Bare Die
In Free Air
45
k/W
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