AMIS-42671 Datasheet, PDF (4/13 Pages) AMI SEMICONDUCTOR – High-Speed CAN Transceiver

AMIS−42671
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
V_CC
V_CANH
Supply Voltage
DC Voltage at Pin CANH
0 < V_CC < 5.25 V;
No Time limit
−0.3
+7
V
−45
+45
V
V_CANL
DC Voltage at Pin CANL
0 < V_CC < 5.25 V;
No Time Limit
−45
+45
V
V_TxD
DC Voltage at Pin TxD
−0.3
V_CC +
V
0.3
V_RxD
DC Voltage at Pin RxD
−0.3
V_CC +
V
0.3
V_AUTB
DC Voltage at Pin AUTB
−0.3
V_CC +
V
0.3
V_REF
DC Voltage at Pin V_REF
−0.3
V_CC +
V
0.3
V_tran(CANH)
V_tran(CANL)
V_esd
Transient Voltage at Pin CANH
Transient Voltage at Pin CANL
Electrostatic Discharge Voltage at All Pins
Note 2
Note 2
Note 3
Note 4
−150
+150
V
−150
+150
V
−4
+4
kV
−500
+500
V
Latch−up
Static Latch−up at all Pins
Note 5
100
mA
T_stg
Storage Temperature
−55
+155
°C
T_A
Ambient Temperature
−40
+125
°C
T_J
Maximum Junction Temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).
3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Conditions
Value
Unit
R_{th(vj−a)}
Thermal Resistance from Junction−to−Ambient in SO−8
In Free Air
150
k/W
package
R_th(vj−s)
Thermal Resistance from Junction−to−Substrate of Bare Die
In Free Air
45
k/W
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