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7WBD3305_14 Datasheet, PDF (4/12 Pages) ON Semiconductor – 2-Bit Translating Bus Switch
7WBD3305
DC ELECTRICAL CHARACTERISTICS
Symbol
VIK
VIH
Parameter
Clamp Diode Voltage
High−Level Input Voltage
(Control)
Conditions
II/O = −18 mA
VCC
(V)
4.5
4.0 to
5.5
TA = 255C
Min Typ Max
−1.2
2.0
TA =
−555C to +1255C
Min
Max Unit
−1.2
V
2.0
V
VIL
Low−Level Input Voltage
(Control)
4.0 to
5.5
0.8
0.8
V
VOH
Output Voltage High
IIN
Input Leakage Current
IOFF
Power Off Leakage Current
ICC
Quiescent Supply Current
See Figure 5
0 v VIN v 5.5 V
5.5
VI/O = 0 to 5.5 V
0
IO = 0,
5.5
VIN = VCC or 0 V
OE1 = OE2 = VCC
OE1 = OE2 = GND
±0.1
±1.0
mA
±0.1
±1.0
mA
±1.0
±1.0
mA
±0.1
±1.0
mA
DICC
Increase in Supply Current
(Control Pin)
One input at 3.4 V;
5.5
Other inputs at VCC
or GND
2.5
mA
RON
Switch ON Resistance
VI/O = 0,
4.5
II/O = 64 mA
II/O = 30 mA
3
7
3
7
W
7
7
VI/O = 2.4,
II/O = 15 mA
15
50
50
VI/O = 2.4,
4.0
II/O = 15 mA
50
70
70
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
Symbol
tPD
tEN
Parameter
Propagation Delay,
Bus to Bus
Output Enable Time
tDIS
Output Disable Time
CIN
CIO(ON)
CIO(OFF)
Control Input Capacitance
Switch On Capacitance
Switch Off Capacitance
Test Condition
See Figure 6
See Figure 6
VIN = 5 or 0 V
Switch ON
Switch OFF
VCC
(V)
4.0 to
5.5
4.5 to
5.5
4.0
4.5 to
5.5
4.0
5.0
5.0
5.0
TA = 25 5C
Min Typ Max
0.25
0.8 2.5 4.2
0.8 3.0 4.6
0.8 3.0 4.8
0.8 2.9 4.4
2.5
10
5
TA =
−555C to +1255C
Min
Max Unit
0.25
ns
0.8
4.2
ns
0.8
4.6
0.8
4.8
ns
0.8
4.4
pF
pF
pF
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