74HCU04 Datasheet, PDF (4/9 Pages) NXP Semiconductors – Hex inverter

74HCU04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V_CC
– 55 to
(V)
25_C v 85_C v 125_C Unit
V_IH Minimum High−Level Input
Voltage
V_out = 0.5 V*
|I_out| v 20 mA
2.0
1.7
1.7
l.7
V
3.0
2.5
2.5
2.5
4.5
3.6
3.6
3.6
6.0
4.8
4.8
4.8
V_IL Maximum Low−Level Input
Voltage
V_out = V_CC – 0.5 V*
|I_out| v 20 mA
2.0
0.3
0.3
0.3
V
3.0
0.5
0.5
0.5
4.5
0.8
0.8
0.8
6.0
1.1
1.1
1.1
V_OH Minimum High−Level Output
Voltage
V_in = GND
|I_out| v 20 mA
2.0
1.8
1.8
1.8
V
4.5
4.0
4.0
4.0
6.0
5.5
5.5
5.5
V_in = GND
|I_out| v 2.4 mA 3.0
2.36
2.26
2.20
|I_out| v 4.0 mA 4.5
3.86
3.76
3.70
|I_out| v 5.2 mA 6.0
5.36
5.26
5.20
V_OL Maximum Low−Level Output
Voltage
V_in = V_CC
|I_out| v 20 mA
2.0
0.2
0.2
0.2
V
4.5
0.5
0.5
0.5
6.0
0.5
0.5
0.5
V_in = V_CC
|I_out| v 2.4 mA 3.0
0.32
0.32
0.32
|I_out| v 4.0 mA 4.5
0.32
0.37
0.40
|I_out| v 5.2 mA 6.0
0.32
0.37
0.40
I_in
Maximum Input Leakage Current V_in = V_CC or GND
6.0
±0.1
±1.0
±1.0
mA
I_CC Maximum Quiescent Supply
Current (per Package)
V_in = V_CC or GND
I_out = 0 mA
6.0
2.0
20
40
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. For VCC = 2.0 V, Vout = 0.2 V or VCC−0.2V.
AC ELECTRICAL CHARACTERISTICS (C_L = 50 pF, Input t_r = t_f = 6 ns)
Guaranteed Limit
Symbol
Parameter
V_CC
– 55 to
(V)
25_C v 85_C v 125_C Unit
t_PLH,
t_PHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 2)
2.0
70
3.0
40
4.5
14
6.0
12
90
105
ns
45
50
18
21
15
18
t_TLH,
t_THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
75
3.0
27
4.5
15
6.0
13
95
110
ns
32
36
19
22
16
19
C_in Maximum Input Capacitance
—
10
10
10
pF
3. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
4. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Per Inverter)*
15
pF
5. Used to determine the no−load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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