74HCT245DTR2G Datasheet, PDF (4/8 Pages) ON Semiconductor – Octal 3-State Noninverting Bus Transceiver with LSTTL-Compatible Inputs

74HCT245
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
V_CC
Guaranteed Limit
(V) -55 to 25°C ≤85°C ≤125°C Unit
V_IH
Minimum High-Level Input Voltage V_out = 0.1V
|I_out| ≤ 20mA
4.5
2.0
5.5
2.0
2.0
2.0
V
2.0
2.0
V_IL
Maximum Low-Level Input Voltage V_out = V_CC - 0.1V
|I_out| ≤ 20mA
4.5
0.8
5.5
0.8
0.8
0.8
V
0.8
0.8
V_OH
Minimum High-Level Output
Voltage
V_in = V_IL
|I_out| ≤ 20mA
V_in = V_IL
4.5
5.5
|I_out| ≤ 4.0mA 4.5
4.4
5.4
3.98
4.4
4.4
V
5.4
5.4
3.84 3.70
V_OL
Maximum Low-Level Output
Voltage
I_in
Maximum Input Leakage Current
I_OZ Maximum Three-State Leakage
Current
I_CC
Maximum Quiescent Supply
Current (per Package)
V_in = V_IH
4.5
|I_out| ≤ 20mA
5.5
V_in = V_IH
|I_out| ≤ 4.0mA 4.5
V_in = V_CC or GND
5.5
Output in High- Impedance State
5.5
V_in = V_IL or V_IH
V_out = V_CC or GND
V_in = V_CC or GND
5.5
I_out = 0mA
0.1
0.1
0.26
±0.1
±0.5
4.0
0.1
0.1
V
0.1
0.1
0.33 0.40
±1.0
±1.0
mA
±5.0
±10
mA
40
40
mA
DI_CC
Additional Quiescent Supply
Current
V_in = 2.4V, Any One Input
≥ -55°C
V_in = V_CC or GND, Other Inputs
I_out = 0mA
5.5
2.9
25 to 125°C
2.4
mA
6. Information on typical parametric values can be found in Chapter 2the ON Semiconductor High- Speed CMOS Data Book (DL129/D).
7. Total Supply Current = I_CC + ΣDI_CC.
AC ELECTRICAL CHARACTERISTICS (C_L = 50 pF, Input t_r = t_f = 6 ns)
Guaranteed Limit
Symbol
Parameter
V_CC –55 to
V
25_C v 85_C v 125_C _Unit
t_PLH,
t_PHL
Maximum Propagation Delay,
A to B, B to A (Figures 1 and 3)
4.5
15
19
22
ns
t_PLZ,
t_PHZ
Maximum Propagation Delay,
Direction or Output Enable to A or B (Figures 2 and 4)
4.5
22
28
33
ns
t_PZL,
t_PZH
Maximum Propagation Delay,
Output Enable to A or B (Figures 2 and 4)
4.5
22
28
33
ns
t_TLH,
t_THL
Maximum Output Transition Time,
Any Output (Figures 1 and 3)
4.5
12
15
18
ns
C_in Maximum Input Capacitance (Pin 1 or Pin 19)
-
10
10
10
pF
C_out Maximum Three-State I/O Capacitance (I/O in High-Impedance State)
-
15
15
15
pF
8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High- Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Per Transceiver Channel) (Note 9)
40
pF
9. Used to determine the no-load dynamic power consumption: P_D = C_PD V_CC2f + I_CC V_CC. For load considerations, see the ON
Semiconductor High- Speed CMOS Data Book (DL129/D).
http://onsemi.com
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