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74HCT14 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Hex inverting Schmitt trigger
74HCT14
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Temperature Limit
Symbol
Parameter
Test Conditions
VCC *55_C to 25_C v85_C
v125_C
(V) Min Max Min Max Min Max Unit
VT)max
VT)min
VT*max
VT*min
VH max
VH min
VOH
VOL
IIK
Maximum Positive−Going
Input Threshold Voltage
Minimum Positive−Going
Input Threshold Voltage
Maximum Negative−Going
Input Threshold Voltage
Minimum Negative−Going
Input Threshold Voltage
Maximum Hysteresis
Voltage
Minimum Hysteresis
Voltage
Minimum High−Level
Output Voltage
Maximum Low−Level
Output Voltage
Maximum Input
Leakage Current
VO = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
VO = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
VO = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
VO = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
VO = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
VO = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
VI < VT*min
|Iout| v 20 mA
VI < VT*min
|Iout| v 4.0 mA
VI ≥ VT)max
|Iout| v 20 mA
VI ≥ VT)max
|Iout| v 4.0 mA
VI = VCC or GND
4.5
5.5
4.5 1.2
5.5 1.4
4.5
5.5
4.5 0.5
5.5 0.6
4.5
5.5
4.5 0.4
5.5 0.4
4.5 4.4
5.5 5.4
4.5 3.98
1.9
1.9
1.9 V
2.1
2.1
2.1
1.2
1.2
V
1.4
1.4
1.2
1.2
1.2
1.4
1.4
1.4
0.5
0.5
0.6
0.6
1.4
1.4
1.4
1.5
1.5
1.5
0.4
0.4
0.4
04
4.4
4.4
V
5.4
5.4
3.84
3.7
4.5
0.1
0.1
0.1 V
5.5
0.1
0.1
0.1
4.5
0.26
0.33
0.4
5.5
$0.1
$1.0
$1.0 mA
ICC
Maximum Quiescent
Supply Current
(per package)
VI = VCC or GND
Iout = 0 mA
5.5
2.0
20
40 mA
w*55_C
25_C to 125_C
DICC Additional Quiescent
VI = 2.4 V, Any One Input
5.5
2.9
Supply Current
VI = VCC or GND, Other Inputs
lout = 0 mA
2.4
mA
7. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (CL = 50 pF; Input tr = tf = 6.0 ns)
Symbol
Parameter
Test Conditions
Guaranteed Limit
*55_C to 25_C v85_C
v125_C
Figures Min Max Min Max Min Max Unit
tPLH,
tPHL
Maximum Propagation
Delay, Input A to Output
Y (L to H)
VCC = 5.0 V $10%
CL = 50 pF, Input tr = tf = 6.0 ns
1&2
32
40
48 ns
tTLH,
tTHL
Maximum Output
Transition Time, Any
Output
VCC = 5.0 V $10%
1&2
CL = 50 pF, Input tr = tf = 6.0 ns
15
19
22 ns
8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance, per Inverter (Note 9)
32
pF
9. Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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