2N4921 Datasheet, PDF (4/8 Pages) ON Semiconductor – 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS

2N4921 thru 2N4923
1.0
0.7 _{D = 0.5}
0.5
0.3 _0.2
0.2 _0.1
0.1 0.05
0.07
0.05 ^0.01
0.03 _{SINGLE PULSE}
0.02
θ_JC(t) = r(t) θ_JC
P(pk)
θ_JC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θ_JC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
t, TIME (ms)
Figure 4. Thermal Response
100 200 300 500 1000
10
7.0
5.0
5.0 ms
100 µs
1.0 ms
3.0
2.0
TJ = 150°C
dc
1.0
0.7
SECOND BREAKDOWN
0.5
LIMITED
BONDING WIRE LIMITED
0.3
THERMALLY LIMITED @ TC = 25°C
0.2 _{PULSE CURVES APPLY BELOW}
0.1
1.0
RATED VCEO
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
10
IC/IB = 20
IC/IB = 10
IC/IB = 20
TJ = 25°C
TJ = 150°C
IB1 = IB2
ts′ = ts - 1/8 tf
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
500 700 1000
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
10
IC/IB = 20
IC/IB = 10
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
20 30 50 70 100 200 300 500 700 1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
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