2N4402 Datasheet, PDF (4/6 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon)

2N4402 2N4403
10
8
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = –10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
f = 1 kHz
8
6
IC = 1.0 mA, RS = 430 Ω
IC = 500 µA, RS = 560 Ω
IC = 50 µA, RS = 2.7 kΩ
4
IC = 100 µA, RS = 1.6 kΩ
6
IC = 50 µA
100 µA
4
500 µA
1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
f, FREQUENCY (kHz)
10 20
50 100
0
50 100 200
500 1 k 2 k
5 k 10 k 20 k 50 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
h PARAMETERS
VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
selected from both the 2N4402 and 2N4403 lines, and the
hfe and other “h” parameters for this series of transistors. To
obtain these curves, a high–gain and a low–gain unit were
same units were used to develop the correspondingly–
numbered curves on each graph.
1000
100 k
700
50 k
2N4403 UNIT 1
2N4403 UNIT 2
500
20 k
2N4402 UNIT 1
2N4402 UNIT 2
300
10 k
200
5k
2N4403 UNIT 1
2k
100
2N4403 UNIT 2
1k
2N4402 UNIT 1
70
2N4402 UNIT 2
500
50
200
30
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
100
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
Figure 11. Input Impedance
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.1
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
500
100
50
20
10
5.0
2.0
1.0
0.1
2N4403 UNIT 1
2N4403 UNIT 2
2N4402 UNIT 1
2N4402 UNIT 2
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mAdc)
5.0 7.0 10
Figure 13. Output Admittance
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data