2N3773 Datasheet, PDF (4/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,140V,150W)

2N3773 2N6609
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.05
0.03
3.0
10 µs
40 µs
100 µs
dc
200 µs
1.0 ms
100 ms
BONDING WIRE LIMIT
THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
500 ms
5.0 7.0 10 20 30 50 70 100 200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100
80
60
40
20
0
0
THERMAL
DERATING
40
80
120
160
200
TC, CASE TEMPERATURE (°C)
Figure 8. Power Derating
4
Motorola Bipolar Power Transistor Device Data