UESD3.3DT5G Datasheet, PDF (3/4 Pages) ON Semiconductor – ESD Protection Diodes - In Ultra Small SOT−723 Package

mESD3.3DT5G SERIES
TYPICAL CHARACTERISTICS
7.4
7.3
7.2
7.1
7.0
6.9
6.8
6.7
6.6
6.5
6.4
6.3
− 55
mESDxxDT5G
+ 25
TEMPERATURE (°C)
Figure 1. Typical Breakdown Voltage
versus Temperature
+ 150
20
18
16
14
12
10
8
6
4
2
0
−55
mESDxxDT5G
+ 25
TEMPERATURE (°C)
Figure 2. Typical Leakage Current
versus Temperature
+ 150
45
40
35
30
mESDxxDT5G
25
20
15
10
5
0
0
1
2
3
4
5
BIAS VOLTAGE (V)
Figure 3. Typical Capacitance versus Bias Voltage
300
250
200
150
100
FR−5 BOARD
50
0
0
25
50 75 100 125 150 175
TEMPERATURE (°C)
Figure 4. Steady State Power Derating Curve
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