TIP35A_05 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Silicon High−Power Transistors

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
125
100
75
50
25
0
0
25
50
75
100
125
150 175
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
TURN−ON TIME
+2.0 V
10
0
R_B
t_r ≤
20 ns
−11.0 V
10 TO 100 mS
DUTY CYCLE ≈ 2.0%
V_CC −30 V
R_L 3.0
TO SCOPE
t_r ≤ 20 ns
TURN−OFF TIME
+9.0 V
V_CC −30 V
R_L 3.0
0
−11.0 V
t_r ≤ 20 ns
10 to 100 ms
10
R_B
V_BB
+4.0 V
TO SCOPE
t_r ≤ 20 ns
DUTY CYCLE ≈ 2.0%
FOR CURVES OF FIGURES 3 & 4, R_B & R_L ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
Figure 2. Switching Time Equivalent Test Circuits
2.0
T_J = 25°C
1.0
I_C/I_B = 10
0.7
V_CC = 30 V
0.5
V_BE(off) = 2 V
0.3
t_r
0.2
0.1
t_d
0.07
0.05
(PNP)
(NPN)
0.03
0.02
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMPERES)
20 30
Figure 3. Turn−On Time
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