SMBT3904DW1T1G Datasheet, PDF (3/8 Pages) ON Semiconductor – Dual General Purpose Transistors

MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
Rise Time
Storage Time
Fall Time
(V_CC = 3.0 Vdc, V_BE = − 0.5 Vdc)
(I_C = 10 mAdc, I_B1 = 1.0 mAdc)
(V_CC = 3.0 Vdc, I_C = 10 mAdc)
(I_B1 = I_B2 = 1.0 mAdc)
Symbol Min
t_d
−
t_r
−
t_s
−
t_f
−
Max
Unit
35
ns
35
200
ns
50
DUTY CYCLE = 2%
300 ns
- 0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t₁ < 500 ms
t₁
DUTY CYCLE = 2%
C_s < 4 pF*
0
- 9.1 V′
+10.9 V
10 k
1N916
< 1 ns
+3 V
275
C_s < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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