SM05T1G Datasheet, PDF (3/5 Pages) ON Semiconductor – Transient Voltage Suppressor Diode Array

SM05T1G Series, SZSM05T1G
TYPICAL CHARACTERISTICS
10
300
250
ALUMINA SUBSTRATE
1
200
150
0.1
0.01
0.1
1
10
100
t_p, PULSE DURATION (ms)
1000
Figure 1. Non−Repetitive Peak Pulse Power
versus Pulse Time
100
FR−5 BOARD
50
0
0
25
50 75 100 125 150 175
TEMPERATURE (°C)
Figure 2. Steady State Power Derating Curve
100
90 ^tr
80
70
60
50
40
30
20
10
0
0
PEAK VALUE I_RSM @ 8 ms
PULSE WIDTH (t_P) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I_RSM/2 @ 20 ms
t_P
20
40
60
80
t, TIME (ms)
Figure 3. 8 × 20 ms Pulse Waveform
250
210
170
130
90
0
1
2
3
4
5
BIAS VOLTAGE (VOLTS)
Figure 4. Typical Diode Capacitance (SM05)
100
90
80
70
60
50
40
30
20
10
0
0
1
5
8
12
BIAS VOLTAGE (VOLTS)
Figure 5. Typical Diode Capacitance (SM12)
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