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SBCP68T1G Datasheet, PDF (3/4 Pages) ON Semiconductor – NPN Silicon Epitaxial Transistor | |||
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1.0
TJ = 25ï°C
0.8
VBE(sat) @ IC/IB = 10
BCP68T1G, SBCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
80
70
TJ = 25ï°C
0.6
VBE(on) @ VCE = 1.0 V
60
0.4
50
0.2
01.0
VCE(sat) @ IC/IB = 10
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 3. âOnâ Voltage
40
30
0
1.0
2.0
3.0
4.0
5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
25
-â0.8
TJ = 25ï°C
-1.2
20
-1.6
15
RqVB for VBE
-â2.0
10
-â2.4
5.0 0
5.0
10
15
-â2.8
20
1.0
10
100
1000
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Base-Emitter Temperature Coefficient
1.0
TJ = 25ï°C
0.8
0.6
= 1000 mA
0.4 I C = 10 mA = 50 mA = 100 mA
0.2
0
0.01
= 500 mA
0.1
1.0
10
100
IB, BASE CURRENT (mA)
Figure 7. Saturation Region
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