REF3025TB-GT3 Datasheet, PDF (3/8 Pages) ON Semiconductor – High Precision, Low Drift, CMOS Voltage Reference

REF3012, REF3020, REF3025, REF3030, REF3033, REF3040
Table 4. ELECTRICAL CHARACTERISTICS
(V_IN = 3.0 V, I_OUT = 0 mA, C_OUT = 0.001 mF, −40°C to +85°C unless specified otherwise.)
Parameter
Test Conditions
Symbol Min
Output Voltage
Output Voltage Accuracy
REF3012
REF3020
REF3025
REF3030 (V_IN = 5.0 V)
REF3033 (V_IN = 5.0 V)
REF3040 (V_IN = 5.0 V)
V_out
1.2475
2.044
2.495
2.994
3.294
4.088
−0.2
Output Voltage Noise (Note 3)
f = 0.1 Hz to 10 Hz
Line Regulation
Output voltage temp Drift
Long−Term Stability (Note 3)
2.7 V ≤ V_IN ≤ 5.5 V
−40°C ≤ T_A ≤ +85°C
0−1000 h
dV_OUT/dT
Load Regulation
Thermal Hysteresis (Note 3)
Dropout Voltage
Short−Circuit Current (Note 3)
V_IN = 3 V
0 mA < I_LOAD < 10 mA
−10 mA < I_LOAD < 0 mA
ΔT_A = 125°C
VOUT = 2.5 V
T_A = 25°C
OUT pin shorted to GND
OUT pin shorted to IN
dV_OUT/
dI_LOAD
dT
V_IN − V_OUT
I_SC
Turn On Settling Time
Power Supply Voltage
Supply Current
Temperature Range
Specified Range
Operating Range
Storage Range
To 0.1% at V_IN = 5 V with C_L = 0
I_L = 0
I_L = 0
V_S
2.7
I_Q
−40
−40
−55
3. Guaranteed by design.
Typ
1.250
2.048
2.500
3.000
3.300
4.096
50
30
20
50
100
150
100
1
50
20
2
Max Unit
1.2525 V
2.052
2.505
3.006
3.306
4.104
+0.2
%
mVp−p
100 mV/V
50 ppm/°C
ppm
mV/mA
250
350
ppm
2.5
mV
mA
60
40
ms
5.5
V
30
mA
°C
+85
+85
+125
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