PZT751 Datasheet, PDF (3/4 Pages) ON Semiconductor – PNP Silicon Planar Epitaxial Transistor

PZT751
TYPICAL CHARACTERISTICS
250
225 ^{TJ = 125°C}
200
V_CE = -2.0 V
175
25°C
150
125
100
- 55°C
75
50
25
0
-10 - 20
- 50 -100 - 200 - 500 -1.0 A -2.0 A -4.0 A
I_C, COLLECTOR CURRENT (mA)
Figure 1. Typical DC Current Gain
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
-50
V_BE(sat) @ I_C/I_B = 10
V_BE(on) @ V_CE = 2.0 V
V_CE(sat) @ I_C/I_B = 10
-100 -200
-500 -1.0 A
I_C, COLLECTOR CURRENT (mA)
Figure 2. On Voltages
-2.0 A -4.0 A
-1.0
-0.9
-0.8
T_J = 25°C
-0.7
-0.6
-0.5
-0.4
-0.3
I_C = -500 mA
I_C = -2.0 A
-0.2
-0.1
I_C = -10 mA I_C = -100 mA
0
-0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
I_B, BASE CURRENT (mA)
-50 -100-200 -500
Figure 3. Collector Saturation Region
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