PACUSBVB Datasheet, PDF (3/7 Pages) ON Semiconductor – USB Downstream Port Terminator with VBUS ESD Protection

PACUSBVB
SPECIFICATIONS (Cont’d)
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
R1
R2
TCR
C1
Parameter
Resistance of R1 Resistor
Resistance of R2 Resistor
Temperature Coefficient of Resistance
Capacitance of C1 Capacitor
TOL_CM
I_LEAK
V_RB
V_SIG
V_ESD
Matching Tolerance of C1 Capacitors
Diode Leakage Current to GND
Diode Reverse Bias Voltage
Signal Voltage:
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
MIL−STD−883D, Method 3015 (HBM)
IEC 61000−4−2 Contact Discharge
T_A = 25C
T_A = 25C
Conditions
0 V DC, 30 mV AC, 1 MHz, 25C
2.5 V DC, 30 mV AC, 1 MHz, 25C
1 MHz, 25C
Measured at 3.3 V DC, 25C
I_LOAD = 10 mA, T_A = 25C
I_LOAD = 10 mA, T_A = 25C
I_LOAD = 10 mA, T_A = 25C
Pins 1, 3 (Notes 1 and 2)
Pins 4, 5 (Note 1)
Pins 4, 5 (Note 1)
Min
Typ
Max Units
26.4
33
39.6
W
15
kW
+1300
ppm/C
37.6 47.0 56.4
pF
25.6 32.0 38.4
pF
2
%
1
100
nA
5.5
V
V
5.6
6.8
9.0
−0.4 −0.8 −1.5
kV
4
20
15
V_CL Clamping Voltage under ESD Discharge MIL−STD−883D, Method 3015 +8 kV
12
V
(Note 3)
MIL−STD−883D, Method 3015 −8 kV
−7
V
(Note 3)
1. ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.
2. Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards. Thus, they do not require
the high ESD protection levels provided for pins 4, 5, and 6.
3. ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if ESD is applied
to pin 6, then the clamping voltage is measured at pin 1).
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