PACDN006_11 Datasheet, PDF (3/7 Pages) ON Semiconductor – 6-Channel ESD Protection Array

PACDN006
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Supply Voltage (V_P − V_N)
Diode Forward DC Current (Note 1)
6.0
V
20
mA
Operating Temperature Range
−40 to +85
C
Storage Temperature Range
−65 to +150
C
DC Voltage at any Channel Input
Package Power Rating
(V_N − 0.5) to (V_P + 0.5)
V
200
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Only one diode conducting at a time.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Operating Supply Voltage (V_P − V_N)
Rating
−40 to +85
0 to 5.5
Units
C
V
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I_P
Supply Current
(V_P − V_N) = 5.5 V
10
mA
V_F
Diode Forward Voltage
I_F = 20 mA
0.65
0.95
V
I_LEAK
Channel Leakage Current
0.1
1.0
mA
C_IN
Channel Input Capacitance
@ 1 MHz, V_P = 5 V,
V_N = 0 V, V_IN = 2.5 V
3
5
pF
V_ESD
ESD Protection
kV
Peak Discharge Voltage at any
(Note 2)
Channel Input, in System
a) Human Body Model,
(Note 3)
15
MIL−STD−883, Method 3015
b) Contact Discharge per
(Note 4)
8
IEC 61000−4−2
c) Air Discharge per IEC 61000−4−2 (Note 4)
15
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
@ 15 kV ESD HBM
V
V_P + 13.0
V_N − 13.0
1. All parameters specified at T_A = 25C unless otherwise noted. V_P = 5 V, V_N = 0 V unless noted.
2. From I/O pins to V_P or V_N only. V_P bypassed to V_N with a 0.22 mF ceramic capacitor (see Application Information for more details).
3. Human Body Model per MIL−STD−883, Method 3015, C_Discharge = 100 pF, R_Discharge = 1.5 kWV_P = 5.0 V, V_N grounded.
4. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W, V_P = 5.0 V, V_N grounded.
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